A High-Electron-Mobility Transistor (HEMT), also known as hetero. It is generally considered that for high voltage/high current applications (900V/100A), vertical device structures might be more suitable owing to their capability of achieving lower specific on-resistance and high breakdown voltage simultaneously. An analytical model for AlGaN/GaN HEMT with polarization effects for high power. For high-power conversion application, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, therefore making it more economical and feasible solution for high-voltage and high-current application. The GaN high-electron-mobility transistor (HEMT) is the most hopeful functioning component in GaN and is presently obtainable from different production team, as like efficient power conversion (EPC), International Rectifier, Transform, GaN Schemes, and others. Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application. TCAD Simulation of GaN-based Vertical FETs (HEMTs)
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